HIGH-TEMPERATURE DEFECTS IN ELECTRON-IRRADIATED SEMICONDUCTORS HGCDTE, PBSNTE

被引：30

作者：

VOITSEHOVSKI, AV

BROUDNYI, VN

LILENKO, YV

KRIVOV, MA

PETROV, AS

机构：

[1] The Siberian Phyisical-Technical Institute, Tomsk State University

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1098(79)90177-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The peculiarities of defect formation in n- and p-type conductivity HgCdTe and PbSnTe crystals after electron irradiation (2 MeV, 300 K) up to 2 × 1018 cm-2 are examined. It has been found that irradiation results in formation of n-type conductivity crystals with final parameters that are determined by the composition of initial samples. The annealing of radiation defects occurs in the 360-470 K temperature range. It has been believed that the change of HgCdTe, PbSnTe properties after electron irradiation at 300 K are connected with formation of radiation defects, including Te vacancies. © 1979.

引用

页码：105 / 108

页数：4

共 9 条

[1]

BROUDNYI VN, 1978, FIZ TECHN POLUPROV, V12, P1495

[2]

BROUDNYI VN, 1975, 4 P C NARR GAP SEM S, P59

[3]

BROUDNYI VN, 1977, FIZ TECHN POLUPROV, V11, P1540

[4] MOBILITY CHANGES PRODUCED BY ELECTRON-IRRADIATION OF N-TYPE HG1-X CDX TE [J].