MAGNETOTRANSPORT AND MAGNETOOPTICAL PROPERTIES OF DELTA-DOPED INSB

被引:17
作者
HEREMANS, J [1 ]
PARTIN, DL [1 ]
MORELLI, DT [1 ]
THRUSH, CM [1 ]
KARCZEWSKI, G [1 ]
FURDYNA, JK [1 ]
机构
[1] UNIV NOTRE DAME,NOTRE DAME,IN 46556
关键词
D O I
10.1063/1.354783
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results of Shubnikov-de Haas (SdH), cyclotron resonance (CR), and Hall-effect measurements on delta-doped InSb:Si films grown by molecular-beam epitaxy on insulating InP substrates are reported. The investigation covers samples with sheet densities of Si dopant atoms ranging from 1 x 10(11) to 1 x 10(13) cm-2, temperatures from 4.2 to 300 K, and fields from 0 to 7 T. The SdH oscillations show that the samples contain electrons of two-dimensional nature, occupying multiple subbands. The effective masses obtained from the CR data correspond well to the subband occupation densities. The Hall measurements as well as the CR experiments also give evidence for the presence of additional electrons, with the conduction-band-edge mass m* = 0.014m0 of bulk InSb, which exist presumably in the bulk of the films.
引用
收藏
页码:1793 / 1798
页数:6
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