MAGNETOOPTICS WITH FEW ELECTRONS IN QUANTUM DOTS ON INSB

We report on our work on quantum dots that contain discrete electron systems near the surface of InSb. The samples are derived from metal-oxide-semiconductor devices and render it possible to tune the electron number by a gate voltage. In order to attain a sufficiently high absorptance for far-infrared magneto-spectroscopy we fabricate the dots by holographic lithography in arrays on macroscopic areas. This way we can detect the limit when only one electron per dot is induced. The influences of the narrow-gap band structure of InSb and of the electron-electron interaction on the discrete dot levels are discussed. © 1990.