LOW-TEMPERATURE ELECTRICAL STUDIES ON METAL-OXIDE VARISTORS - CLUE TO CONDUCTION MECHANISMS

被引:43
作者
PHILIPP, HR [1 ]
LEVINSON, LM [1 ]
机构
[1] GE,SCHENECTADY,NY 12301
关键词
D O I
10.1063/1.323843
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1621 / 1627
页数:7
相关论文
共 32 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]   INVESTIGATION OF VARIOUS MODELS FOR METAL-OXIDE VARISTORS [J].
BERNASCONI, J ;
KLEIN, HP ;
KNECHT, B ;
STRASSLER, S .
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (05) :473-495
[3]   BISMUTH OXIDE EVAPORATION LAYERS .1. PREPARATION AND ELECTRICAL AND OPTICAL PROPERTIES [J].
GOBRECHT, H ;
SEECK, S ;
BERGT, HE ;
MARTENS, A ;
KOSSMANN, K .
PHYSICA STATUS SOLIDI, 1969, 33 (02) :599-&
[4]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].
GOETZBERGER, A ;
SCARLETT, RM ;
HAITZ, RH ;
MCDONALD, B .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+
[5]  
HARNDEN JD, 1972, ELECTRONICS-US, V45, P91
[6]   ELECTRONIC PROCESSES IN ZINC OXIDE [J].
HEILAND, G ;
MOLLWO, E ;
STOCKMANN, F .
SOLID STATE PHYSICS, 1959, 8 :191-323
[7]  
Kingery WD, 1960, INTRO CERAMICS
[8]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[9]  
Levine J. D., 1975, Critical Reviews in Solid State Sciences, V5, P597, DOI 10.1080/10408437508243517
[10]   METAL-OXIDE VARISTOR - MULTIJUNCTION THIN-FILM DEVICE [J].
LEVINSON, LM ;
PHILIPP, HR .
APPLIED PHYSICS LETTERS, 1974, 24 (02) :75-76