GENERAL SOLUTIONS OF PHOTOVOLTAIC EFFECTS IN SEMICONDUCTOR JUNCTIONS

被引：7

作者：

TAKAHASHI, K

机构：

[1] Department of Electronics, Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1969年 / 26卷 / 03期

关键词：

D O I：

10.1080/00207216908938159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photovoltaic effects in heterojunctions with carrier injection from the junction have been analysed. It is clarified that any of the various equations on the characteristics of semiconductor, junctions proposed by several investigators can be solved using the general solutions of photovoltaic effects in the heterojunctions. The effects of the thickness of the semiconductor on the photoresponse has also been discussed. It is made clear that the mathematical result is in good agreement with the physical one. © 1969, Walter de Gruyter. All rights reserved.

引用

页码：253 / +

页数：1

共 5 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].