AU-AG ALLOY-SILICON SCHOTTKY BARRIERS

被引：16

作者：

ARIZUMI, T

HIROSE, M

ALTAF, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 08期

关键词：

D O I：

10.1143/JJAP.7.870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：870 / &

共 14 条

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[9] EXPERIMENTAL STUDY OF ORIGIN OF SURFACE STATES ON CLEAN SURFACES [J].

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[10] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].

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