A FLOATING-GATE MOSFET WITH TUNNELING INJECTOR FABRICATED USING A STANDARD DOUBLE-POLYSILICON CMOS PROCESS

A floating-gate MOSFET, which is programmable in both directions by Fowler-Nordheim tunneling, has been fabricated using an inexpensive standard 2-mu-m double-polysilicon CMOS technology that is accessible for MOSIS1 customers. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented and recommendations for efficient programming given. This is the first floating-gate FET with tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.