INVESTIGATIONS OF THE NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT BISTABILITY IN DOUBLE BARRIER N+GAAS/(ALGA)AS/GAAS/(ALGA)AS/N+GAAS RESONANT TUNNELLING DEVICES USING HIGH MAGNETIC-FIELDS

被引：5

作者：

PAYLING, CA

ALVES, E

EAVES, L

FOSTER, TJ

HENINI, M

HUGHES, OH

SIMMONDS, PE

PORTAL, JC

HILL, G

PATE, MA

机构：

[1] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

[2] INST NATL SCI APPL LYON,LPS,F-31077 TOULOUSE,FRANCE

[3] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:1987563

中图分类号：

学科分类号：

摘要：

引用

页码：289 / 292

页数：4

共 9 条

[1]

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[7] STABLE AND UNSTABLE CURRENT-VOLTAGE MEASUREMENTS OF A RESONANT TUNNELING HETEROSTRUCTURE OSCILLATOR [J].

SHEWCHUK, TJ ;

GERING, JM ;

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APPLIED PHYSICS LETTERS, 1985, 47 (09) :986-988

[8] QUANTUM WELL OSCILLATORS [J].

SOLLNER, TCLG ;

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PECK, DD ;

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APPLIED PHYSICS LETTERS, 1984, 45 (12) :1319-1321

[9] EQUIVALENCE BETWEEN RESONANT TUNNELING AND SEQUENTIAL TUNNELING IN DOUBLE-BARRIER DIODES [J].

WEIL, T ;

VINTER, B .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1281-1283

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