CALCULATION OF THE OPTIMUM ELECTRON-ENERGY OF A DEDICATED STORAGE RING FOR X-RAY-LITHOGRAPHY

被引：13

作者：

BETZ, H ^{[1
]}

FEY, FK ^{[1
]}

HEUBERGER, A ^{[1
]}

TISCHER, P ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN 83,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Depending on the electron energy of a storage ring, exposure time and contrast due to the mask absorber are calculated. Different combinations of beam-line windows, mask membranes, and thicknesses of absorber assuming the use of PMMA resist are taken into account. The influence of electrons produced in the substrate and backscattered into the resist is also numerically estimated. From these evaluations it is concluded that the optimum electron energy of a storage ring for X-ray lithography is 0.9 GeV at a magnetic field of 1.5 T in the deflection magnets. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：693 / 698

页数：6

共 16 条

[1] Space-distribution of x-ray photoelectrons ejected from the K and L atomic energy-levels [J].