MOLECULAR-BEAM EPITAXY - ASPECTS AND APPLICATIONS

被引：5

作者：

BAUER, G

SPRINGHOLZ, G

机构：

[1] Institut für Halbleiterphysik, Johannes Kepler Universität Linz

来源：

VACUUM | 1992年 / 43卷 / 5-7期

关键词：

D O I：

10.1016/0042-207X(92)90038-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular beam epitaxy is one of the most important methods for crystal growth for the preparation of epitaxial films and artificially structured solids. The basic principles are reviewed with special emphasis on in situ characterization by reflection high energy electron diffraction (RHEED). Some recent advances in the growth of compound semiconductors particularly of IV-VI compounds are presented as well as typical applications of MBE grown multilayer systems, such as heterostructure lasers.

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页码：357 / 365

页数：9

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