GROWTH OF CUBIC BORON-NITRIDE COATINGS IN A MAGNETIC-FIELD ENHANCED RF GLOW-DISCHARGE

被引:52
作者
DWORSCHAK, W
JUNG, K
EHRHARDT, H
机构
[1] Universität Kaiserslautern, Fachbereich Physik
关键词
D O I
10.1016/0925-9635(94)90182-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
c-BN films have been successfully prepared in a magnetic field enhanced r.f. glow discharge (v(r.f.) = 13.56 MHz). Without the magnetic field, only h-BN could be detected in the infrared (IR) spectra of the deposited films. The dependence of the c-BN content on the process parameters, such as ion energy, substrate temperature, magnetic field and gas composition, was investigated by IR spectroscopy, Auger electron spectroscopy, X-ray diffraction and ellipsometric measurements. Optical emission spectroscopy of the plasma supports the assumption that this CVD process is comparable to PVD processes. A threshold value of 1.1 for the B/N ratio in the BN deposits is assumed, above which only h-BN growth is possible.
引用
收藏
页码:337 / 340
页数:4
相关论文
共 16 条
[1]   CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :399-405
[2]   PREPARATION OF C-BN CONTAINING FILMS BY REACTIVE RF-SPUTTERING [J].
BEWILOGUA, K ;
BUTH, J ;
HUBSCH, H ;
GRISCHKE, M .
DIAMOND AND RELATED MATERIALS, 1993, 2 (08) :1206-1210
[3]  
ICHINOSE Y, 1987, 11TH P S ION SOURC I, P469
[4]   PHASE-CONTROL OF CUBIC BORON-NITRIDE THIN-FILMS [J].
KESTER, DJ ;
MESSIER, R .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :504-513
[5]  
KOIDL P, 1989, MATER SCI FORUM, V52, P41
[6]   COMPRESSIVE STRESS-INDUCED FORMATION OF CUBIC BORON-NITRIDE [J].
MCKENZIE, DR ;
MCFALL, WD ;
SAINTY, WG ;
DAVIS, CA ;
COLLINS, RE .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :970-976
[7]  
MEINO M, 1990, JPN J APPL SCI, V29, pL1175
[8]   PREPARATION OF CUBIC BORON-NITRIDE FILM BY CO2-LASER PHYSICAL VAPOR-DEPOSITION WITH SIMULTANEOUS NITROGEN ION SUPPLY [J].
MINETA, S ;
KOHATA, M ;
YASUNAGA, N ;
KIKUTA, Y .
THIN SOLID FILMS, 1990, 189 (01) :125-138
[9]  
REINKE S, 1993, 3RD INT S DIAM MAT H
[10]   DEPOSITION MECHANISMS FOR PROMOTING SP(3) BONDING IN DIAMOND-LIKE CARBON [J].
ROBERTSON, J .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :984-989