REM OBSERVATIONS OF THE BIRTH STAGE OF THE FLAT FACETS ON AN INNER CYLINDRICAL SILICON SURFACE

被引：35

作者：

SUZUKI, T

METOIS, JJ

YAGI, K

机构：

[1] CNRS,CRMC2,F-13288 MARSEILLE 09,FRANCE

[2] TOKYO INST TECHNOL,DEPT PHYS,MEGURO KU,TOKYO 152,JAPAN

来源：

SURFACE SCIENCE | 1995年 / 339卷 / 1-2期

基金：

日本学术振兴会;

关键词：

REFLECTION ELECTRON MICROSCOPY (REM); SILICON; SURFACE ENERGY; SURFACE STRUCTURE; VICINAL SINGLE CRYSTAL SURFACES;

D O I：

10.1016/0039-6028(95)00658-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In situ reflection electron microscopy observations of an inner cylindrical surface prepared mechanically from a (110) silicon wafer reveal, after annealing at 1050 degrees C, flat facets: {111}, {113}, {110} and a curved ''facet'' in the [001] direction. Assuming local equilibrium of vicinals nearby these orientations, investigations of the junctions between vicinals and facets are carried out. All junctions seem to be smooth except for the {113} facets. These results illustrate the usefulness of this technique to investigate, accurately, the surface free energy anisotropy of the equilibrium shape crystal of silicon.

引用

页码：105 / 113

页数：9

共 34 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES [J].