A NEW DESIGN OF A LOW-NOISE, LOW-POWER CONSUMPTION CMOS CHARGE AMPLIFIER

被引：8

作者：

HU, Y ^{[1
]}

NYGARD, E ^{[1
]}

机构：

[1] UNIV OSLO,OSLO,NORWAY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 365卷 / 01期

关键词：

D O I：

10.1016/0168-9002(95)00494-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper, a new design of a low noise, low power consumption charge amplifier is described. Theoretical results show that an ENC (Input-referred Equivalent Noise Charge) reduction of 258 electrons for a detector capacitor C-D of 10 pF has been obtained with regard to a conventional charge amplifier. A complete readout system including the proposed charge amplifier followed by a shaper amplifier has been realized in a 1.2 mu m CMOS N-well process. The noise performance of 112 electrons at 0 pF with a slope of 34 electrons/pF for a shaping time of 200 ns and 1 mW power consumption has been obtained.

引用

页码：193 / 197

页数：5

共 4 条

[1] AMPLEX, A LOW-NOISE, LOW-POWER ANALOG CMOS SIGNAL PROCESSOR FOR MULTI-ELEMENT SILICON PARTICLE DETECTORS [J].