PHOTOEMISSION OSCILLATIONS DURING EPITAXIAL-GROWTH

被引：23

作者：

ECKSTEIN, JN

WEBB, C

WENG, SL

BERTNESS, KA

机构：

来源：

关键词：

D O I：

10.1063/1.98485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1833 / 1835

页数：3

共 11 条

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[6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE
FOXON, CT
JOYCE, BA
[J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450
[7] ELECTRONIC AND STRUCTURAL-PROPERTIES OF STEPS ON CLEAVED SEMICONDUCTOR SURFACES
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[J]. SURFACE SCIENCE, 1980, 99 (01) : 157 - 164
[8] LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222
[9] SURFACE-STATES AT CLEAN, CLEAVED GAAS(110) SURFACES
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