SURFACE-STATES AT CLEAN, CLEAVED GAAS(110) SURFACES

[1] ASSMANN J, UNPUBLISHED

[2] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

[3] TEMPERATURE DEPENDENCE OF WORK FUNCTION OF SILICON [J]. PHYSIK DER KONDENSITERTEN MATERIE, 1968, 8 (01): : 31 - +

[4] BAUERLE F, 1972, J APPL PHYS, V43, P3917

[5] DIPOLE-MOMENTS ASSOCIATED WITH EDGE ATOMS - COMPARATIVE-STUDY ON STEPPED PT, AU AND W SURFACES [J]. SURFACE SCIENCE, 1977, 68 (01) : 39 - 46

[6] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812

[7] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248

[8] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J]. PHYSICAL REVIEW B, 1976, 14 (10) : 4724 - 4726

[9] CLEMENS HJ, 1977, 3RD P INT C SOL SURF, P635

[10] CLEMENS HJ, UNPUBLISHED

[1] ASSMANN J, UNPUBLISHED

[2] Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

[3] TEMPERATURE DEPENDENCE OF WORK FUNCTION OF SILICON [J]. PHYSIK DER KONDENSITERTEN MATERIE, 1968, 8 (01): : 31 - +

[4] BAUERLE F, 1972, J APPL PHYS, V43, P3917

[5] DIPOLE-MOMENTS ASSOCIATED WITH EDGE ATOMS - COMPARATIVE-STUDY ON STEPPED PT, AU AND W SURFACES [J]. SURFACE SCIENCE, 1977, 68 (01) : 39 - 46

[6] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812

[7] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248

[8] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J]. PHYSICAL REVIEW B, 1976, 14 (10) : 4724 - 4726

[9] CLEMENS HJ, 1977, 3RD P INT C SOL SURF, P635

[10] CLEMENS HJ, UNPUBLISHED