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THE INVERSE-NARROW-WIDTH EFFECT OF LOCOS ISOLATED N-MOSFET IN A HIGH-CONCENTRATION P-WELL

被引：3
作者：
OHE, K
YABU, T
KUGO, S
UMIMOTO, H
ODANAKA, S
机构：
[1] Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., Moriguchi
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 12期
关键词：
D O I：
10.1109/55.192869
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The inverse-narrow-width effect (INWE) of a LOCOS isolated n-MOSFET formed in high-concentration p-wells is described. The threshold behavior is characterized as a function of the concentration of p-well, using experimental data and three-dimensional process / device simulations. In a high-concentration p-well, the devices with a LOCOS isolation show the INWE, which was observed in trench-isolated devices. This effect is enhanced with increase of the p-well concentration. The INWE in the LOCOS isolated MOSFET is explained by the boron segregation phenomenon during LOCOS process and boron redistribution.
引用
收藏
页码：636 / 638
页数：3
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