NUMERICAL MODELING OF NONPLANAR OXIDATION COUPLED WITH STRESS EFFECTS

被引：16

作者：

UMIMOTO, H

ODANAKA, S

NAKAO, I

ESAKI, H

机构：

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1989年 / 8卷 / 06期

关键词：

D O I：

10.1109/43.31516

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：599 / 607

页数：9

共 17 条

[1]

BORUCKI L, 1985, 4TH P C NUM AN SEM D, P226

[2] DETERMINATION OF OPTIMUM ACCELERATING FACTOR FOR SUCCESSIVE OVER-RELAXATION [J].

CARRE, BA .

COMPUTER JOURNAL, 1961, 4 :73-&

[3]

CHIN D, 1983, IEEE T ELECTRON DEV, V30, P744, DOI 10.1109/T-ED.1983.21204

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293

[6] OXIDATION-INDUCED STRESS IN A LOCOS STRUCTURE [J].

ISOMAE, S ;

YAMAMOTO, S ;

AOKI, S ;

YAJIMA, A .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :368-370

[7]

Kao D.-B., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P388

[8] THE OXIDATION OF SHAPED SILICON SURFACES [J].

MARCUS, RB ;

SHENG, TT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1278-1282

[9] NUMERICAL MODELING OF NONUNIFORM SI THERMAL-OXIDATION [J].

MATSUMOTO, H ;

FUKUMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :132-140

[10] SMART-P - RIGOROUS 3-DIMENSIONAL PROCESS SIMULATOR ON A SUPERCOMPUTER [J].

ODANAKA, S ;

UMIMOTO, H ;

WAKABAYASHI, M ;

ESAKI, H .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (06) :675-683

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