CONTRIBUTIONS OF OXYGEN, SILICON, AND HYDROGEN TO INTERFACE STATES OF AN SI-SIO2 INTERFACE

被引：12

作者：

FAHRNER, W ^{[1
]}

机构：

[1] FRAUNHOFER GESELLSCHAFT, INST ANGEW FESTKORPER PHYS, ECKER STR 4, D-7800 FREIBURG, WEST GERMANY

来源：

关键词：

D O I：

10.1149/1.2401918

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：784 / 787

页数：4

共 9 条

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KAO, KC
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[3] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES
FAHRNER, W
GOETZBERGER, A
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 329 - +
[4] FAHRNER W, 1972, THESIS U FREIBURG, P55
[5] FAHRNER W, 1971, 2 INT C ION IMPL, P307
[6] JOHNSON WS, 1969, PROJECTED RANGE STAT
[7] KOOI E, 1966, PHILIPS RES REP, V21, P477
[8] REISS H, 1959, SEMICONDUCTORS
[9] INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON SI SURFACE POTENTIAL IN SI-SIO2 SYSTEM
REVESZ, AG
ZAININGER, KH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 246 - +