AN ANOMALOUS FEATURE ON THE DLTS SPECTRUM OF SILICON

被引：4

作者：

LONDOS, CA ^{[1
]}

机构：

[1] UNIV READING,READING RG6 2AH,BERKS,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 10期

关键词：

SEMICONDUCTOR MATERIALS - Charge Carriers;

D O I：

10.1016/0038-1098(87)90416-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The behavior of a very curious feature arising on the DLTS spectrum of LN//2 electron-irradiated pulled silicon is studied. It is shown that this behavior is not consistent with a normal DLTS peak caused by the trapping and emission of carrier from a deep level. However, it is almost certain that this feature is a result of the low-temperature irradiation of the pulled silicon. A model is proposed based on the oxygen trapping at abnormal sites in the silicon lattice.

引用

页码：719 / 722

页数：4

共 11 条

[1]

BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[2] ANOMALOUS MAJORITY-CARRIER PEAKS IN DEEP LEVEL TRANSIENT SPECTROSCOPY [J].