DIRECT NITRIDATION OF SILICON SUBSTRATES

被引：37

作者：

FRIESER, RG

机构：

来源：

关键词：

D O I：

10.1149/1.2410895

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1092 / &

共 11 条

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[2]

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FRIESER, RG .

[4]

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[5]

HESLOP RB, 1960, INORGANIC CHEMISTRY, P29

[6]

KIRK RE, 1954, ENCYCLOPEDIA CHEMICA, V12, P370

[7]

KIRK RE, 1954, ENCYCLOPEDIA CHEMICA, V13, P823

[8]

KNOPP AN, 1965, ELECTROCHEM TECHNOL, V3, P84

[9] PROPERTIES OF THERMALLY GROWN SILICON NITRIDE FILMS [J].

OKADA, K ;

SAKANE, H ;

SUGIOKA, Y .

[10]

SANDERSON RT, 1962, CHEMICAL PERIODICITY, P203