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THE ABSOLUTE COVERAGE OF K ON THE SI(111)-3X1-K SURFACE

被引：48
作者：
HASHIZUME, T
KATAYAMA, M
JEON, DR
AONO, M
SAKURAI, T
机构：
[1] INST PHYS & CHEM RES, WAKO, SAITAMA 35101, JAPAN
[2] MYONG JI UNIV, DEPT PHYS, SEOUL 449728, SOUTH KOREA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9A期
关键词：
STM; ALKALI METAL; ISS; SI(111);
D O I：
10.1143/JJAP.32.L1263
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The absolute coverage of K on the Si(111)-3 x 1-K surface which was prepared by deposition of K on the 420-degrees-C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0. 29 +/- 0.03 ML. This result rules out the possibility that the 3 x 1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3 x 1 overlayer are not imaged bright in the STM.
引用
收藏
页码：L1263 / L1265
页数：3
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