POSSIBLE QUANTUM EFFECTS IN AMORPHOUS-SILICON DOUBLE SCHOTTKY DIODES

被引:11
作者
JAFAR, M
HANEMAN, D
机构
[1] School of Physics, University of New South Wales, Kensington, 2033
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 16期
关键词
D O I
10.1103/PhysRevB.47.10911
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous silicon double Schottky switching diodes in which one contact is vanadium, formed to produce switching, can show discrete steps in the I-V characteristics in the ON state. These steps frequently occur at resistances of h/2ne2 where n is an integer. The effect has been found quite strongly at room temperature, whereas in a previous report, only up to 190 K. Other conditions were also significantly different. A small-scale statistical analysis shows that the effect appears to be real. An expression for it is derived based on quantum confinement in small conducting inclusions.
引用
收藏
页码:10911 / 10914
页数:4
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