PERSISTENT PHOTOCONDUCTIVITY AND FIELD-ENHANCED CONDUCTIVITY IN AMORPHOUS-SILICON DOPING-MODULATED SUPERLATTICES

被引：19

作者：

HANEMAN, D

ZHANG, DH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.35.2536

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2536 / 2539

页数：4

共 15 条

[1] PERSISTENT PHOTOCONDUCTIVITY IN A-SI-H/A-SINX-H LAYERED STRUCTURES [J].

AGARWAL, SC ;

GUHA, S .

PHYSICAL REVIEW B, 1985, 31 (08) :5547-5550

[2] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED MULTILAYERS AND COMPENSATED THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON [J].

AGARWAL, SC ;

GUHA, S .

PHYSICAL REVIEW B, 1985, 32 (12) :8469-8472

[3]

ANKRUM P, 1971, SEMICONDUCTOR ELECTR

[4]

CHACORN V, UNPUB

[5]

DOHLER GH, 1984, 17TH P INT C PHYS SE, P491

[6] THICKNESS DEPENDENCES OF PROPERTIES OF P-DOPED AND B-DOPED HYDROGENATED AMORPHOUS-SILICON .2. ELECTRON-SPIN-RESONANCE, HYDROGEN VIBRATIONAL-SPECTRA AND OPTICAL-ABSORPTION [J].

HASEGAWA, S ;

SHIMIZU, S ;

KURATA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (05) :521-532

[7] CARRIER RECOMBINATION TIMES IN AMORPHOUS-SILICON DOPING SUPERLATTICES [J].

HUNDHAUSEN, M ;

LEY, L ;

CARIUS, R .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1598-1601

[8] MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

HUNDHAUSEN, M ;

LEY, L .

PHYSICAL REVIEW B, 1985, 32 (10) :6655-6662

[9] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

KAKALIOS, J ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605

[10]

KAKALIOS J, UNPUB J NONCRYST SOL

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