MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES

[1] PHOTOINDUCED METASTABLE SURFACE EFFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6628 - 6633

[2] N-I-P-I DOPING SUPER-LATTICES - TAILORED SEMICONDUCTORS WITH TUNABLE ELECTRONIC-PROPERTIES [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 : 207 - 226

[3] PHONON-ASSISTED TRANSITION RATES .1. OPTICAL-PHONON-ASSISTED HOPPING IN SOLIDS [J]. ADVANCES IN PHYSICS, 1975, 24 (03) : 305 - 348

[4] CARRIER RECOMBINATION TIMES IN AMORPHOUS-SILICON DOPING SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (16) : 1598 - 1601

[5] TEMPERATURE-DEPENDENT LIGHT-INDUCED-CHANGES AND ANNEALING OF THE CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 429 - 432

[6] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (16) : 1602 - 1605

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[8] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639

[9] OPTICALLY INDUCED EXCESS CONDUCTIVITY IN COMPENSATED A-SI-H FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 405 - 408

[10] Ploog K., 1982, Microelectronics Journal, V13, P5, DOI 10.1016/S0026-2692(82)80181-X

[1] PHOTOINDUCED METASTABLE SURFACE EFFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6628 - 6633

[2] N-I-P-I DOPING SUPER-LATTICES - TAILORED SEMICONDUCTORS WITH TUNABLE ELECTRONIC-PROPERTIES [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 : 207 - 226

[3] PHONON-ASSISTED TRANSITION RATES .1. OPTICAL-PHONON-ASSISTED HOPPING IN SOLIDS [J]. ADVANCES IN PHYSICS, 1975, 24 (03) : 305 - 348

[4] CARRIER RECOMBINATION TIMES IN AMORPHOUS-SILICON DOPING SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (16) : 1598 - 1601

[5] TEMPERATURE-DEPENDENT LIGHT-INDUCED-CHANGES AND ANNEALING OF THE CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 429 - 432

[6] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (16) : 1602 - 1605

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[8] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639

[9] OPTICALLY INDUCED EXCESS CONDUCTIVITY IN COMPENSATED A-SI-H FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 405 - 408

[10] Ploog K., 1982, Microelectronics Journal, V13, P5, DOI 10.1016/S0026-2692(82)80181-X