SILICON-INDUCED LOCAL INTERFACE DIPOLE IN AL GAAS(001) SCHOTTKY DIODES

被引：33

作者：

CANTILE, M

SORBA, L

YILDIRIM, S

FARACI, P

BIASIOL, G

FRANCIOSI, A

MILLER, TJ

NATHAN, MI

机构：

[1] INFM, LAB TASC, I-34012 TRIESTE, ITALY

[2] UNIV MINNESOTA, DEPT ELECT ENGN, MINNEAPOLIS, MN 55455 USA

[3] CNR, IST ACUST OM CORBINO, I-00189 ROME, ITALY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.110927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al/Si/GaAs(001) diode structures grown by molecular beam epitaxy were examined as a function of the thickness of the Si interface layer and the intensity of the As or Al flux employed during Si deposition. We found that Schottky barriers as low as 0.3-0.4 eV (in the presence of a sufficiently high As flux) or as high as 1.0-1.1 eV (in the presence of a sufficiently high Al flux) can be established on n-type GaAs at Si coverages in the submonolayer to monolayer range. We therefore associate the tunability of the barrier height with a Si-induced local interface dipole.

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页码：988 / 990

页数：3

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