HIGH-TEMPERATURE SCHOTTKY TTL LATCHUP

被引：7

作者：

COOPER, MS

RETZLER, JP

MESSENGER, GC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1538 / 1544

页数：7

共 12 条

[1]

COPPAGE, 1977, IEEE T NUC SCI, V24, P2226

[2] TECHNIQUE FOR SELECTION OF TRANSIENT RADIATION HARD JUNCTION ISOLATED INTEGRATED-CIRCUITS [J].

CROWLEY, JL ;

JUNGA, FA ;

STULTZ, TJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1703-1708

[3]

DENNEHY, 1969, IEEE T NUC SCI, V16, P114

[4] LATCH-UP IN CMOS INTEGRATED-CIRCUITS [J].

GREGORY, BL ;

SHAFER, BD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :293-299

[5]

KINOSHITO, 1965, IEEE T NUCLEAR SCI, V12, P83

[6]

LEAVY, 1969, IEEE T NUCLEAR SCI, V16, P96

[7] MSI-LSI RADIATION RESPONSE, CHARACTERIZATION AND TESTING [J].

RAYMOND, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :308-314

[8]

SCHARFELTER, 1968, SOLID STATE ELECTRON, V8, P299

[9]

SZE SM, 1964, PHYSICS SEMICONDUCTO, P324

[10] REDUCTION OF STORAGE TIME OF A TRANSISTOR USING A SCHOTTKY-BARRIER DIODE [J].

TADA, K ;

LARAYA, JLR .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11) :2064-&

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