PH-ISFET WITH NMOS TECHNOLOGY

被引：25

作者：

ALEGRET, S

BARTROLI, J

JIMENEZ, C

DELVALLE, M

DOMINGUEZ, C

CABRUJA, E

MERLOS, A

机构：

[1] UNIV AUTONOMA BARCELONA,DEPT QUIM,E-08193 BARCELONA,SPAIN

[2] UNIV AUTONOMA BARCELONA,CSIC,CTR NACL MICROELECTR,E-08193 BARCELONA,SPAIN

来源：

ELECTROANALYSIS | 1991年 / 3卷 / 4-5期

关键词：

D O I：

10.1002/elan.1140030418

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The construction of a pH-ISFET (ion-selective field effect transistor) fabricated with standard negative-channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH-sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11, with a slope of 54 mV per pH unit.

引用

页码：355 / 360

页数：6

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