ANNEALING CHARACTERISTICS AND THERMAL-STABILITY OF ELECTRON-BEAM EVAPORATED RUTHENIUM SCHOTTKY CONTACTS TO N-GAAS

被引：16

作者：

MYBURG, G

AURET, FD

机构：

[1] Department of Physics, University of Pretoria

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality ruthenium Schottky barrier diodes were fabricated on epitaxially grown n-GaAs, by the electron beam evaporation of Ru. Annealing studies were carried out in vacuum and in air. The effective barrier height and the flatband barrier height of the as-deposited Schottky contacts were 0.86 and 0.91 eV, respectively. These barrier heights reached their respective maximum values of 0.93 and 0.96 eV, after annealing at 450-degrees-C in vacuum. The electrical characteristics of a third set of contacts, which was subjected to prolonged (1000 min) annealing at 400-degrees-C in vacuum, showed no measureable signs of degradation.

引用

页码：604 / 606

页数：3

共 15 条

[1] BARRIER HEIGHT AND LEAKAGE REDUCTION IN N-GAAS-PLATINUM GROUP METAL SCHOTTKY BARRIERS UPON EXPOSURE TO HYDROGEN [J].