INXGA1-XASYP1-Y-INP HETEROJUNCTION PHOTODIODES

被引：44

作者：

WIEDER, HH ^{[1
]}

CLAWSON, AR ^{[1
]}

MCWILLIAMS, GE ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

关键词：

D O I：

10.1063/1.89718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：468 / 470

页数：3

共 10 条

[1] ANTYPAS GA, 1973, 1972 P S GAAS, P48
[2] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746
[3] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
CASEY, HC
SELL, DD
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257
[4] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP
CASEY, HC
BUEHLER, E
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249
[5] DOLGINOV LM, 1976, SOVIET PHYSICS SEMIC, V9, P871
[6] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285
[7] EFFICIENT LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LEDS AT 1.1 MU-M FROM GA-XIN-1-XAS-YP-1-Y
PEARSALL, TP
MILLER, BI
CAPIK, RJ
BACHMANN, KJ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 499 - 501
[8] PRINCE MB, 1967, SEMIMETALS SEMICONDU, V5, P85
[9] ANALYSIS AND DESIGN CONSIDERATIONS OF BURSTEIN NARROW-BAND PHOTON DETECTORS
SALEH, N
SOLIMAN, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01): : 39 - 43
[10] SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P527