ESR STUDY OF ACTIVE OXYGEN RADICALS FROM PHOTOEXCITED SEMICONDUCTORS USING THE SPIN-TRAPPING TECHNIQUES

被引：31

作者：

NODA, H ^{[1
]}

OIKAWA, K ^{[1
]}

KAMADA, H ^{[1
]}

机构：

[1] YAMAGATA RES INST TECHNOL, NUMAGI, YAMAGATA 990, JAPAN

来源：

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN | 1992年 / 65卷 / 09期

关键词：

D O I：

10.1246/bcsj.65.2505

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The ESR spin-trapping technique was used to detect active oxygen radicals by photoexcitation of powdery semiconductors (TiO2, WO3, CdS, and Fe2O3) in water and aqueous H2O2 solutions using 5,5-dimethyl-1-pyrroline N-oxide (DMPO) as spin trap. Superoxide ion(O2-), hydroperoxyl radical (.O2H) and hydroxyl radical (.OH) were detected under photoexcitation. The mechanism for the generation of active oxygen radicals is discussed referring to the energy band structures of the semiconductors and the redox potentials of the oxygen radicals.

引用

页码：2505 / 2509

页数：5

共 26 条

[21] PREPARATION OF TITANIUM(IV) OXIDES AND ITS CHARACTERIZATION [J].