PHYSICAL BASIS FOR APPLYING THE FOWLER-NORDHEIM J-E RELATIONSHIP TO EXPERIMENTAL IV DATA

被引:78
作者
NICOLAESCU, D
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 02期
关键词
D O I
10.1116/1.586867
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The purpose of this work is to show that the Fowler-Nordheim (FN) current-voltage (I-V) plot [log(I/V2) as a function of 1/V] must be treated, on principle, as nonlinear. The cause of this behavior is outlined to be the fact that the electric field and current density are not constant over the emitter's surface. Traditional approach of the FN I-V plot as being linear may lead to physical contradictions. These contradictions are brought into light. A field emitter model is then developed, which allows to express in closed analytical equations the above statements. Expressions for field enhancement factor, area factor and also for the I-V relationship are obtained. The FN I-V plot nonlinearities are shown to be greater for smaller voltages. Within this model, the FN I-V plot can be taken as quasilinear, under some assumptions. Suggestions for technological parameter extraction from I-V data through nonlinear or linear least-squares optimization techniques are done.
引用
收藏
页码:392 / 395
页数:4
相关论文
共 17 条
[1]   DEMONSTRATION OF LOW-VOLTAGE FIELD-EMISSION [J].
ADLER, EA ;
BARDAI, Z ;
FORMAN, R ;
GOEBEL, DM ;
LONGO, RT ;
SOKOLICH, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2304-2308
[2]   FIELD-EMISSION FROM METAL-COATED SILICON TIPS [J].
BRANSTON, DW ;
STEPHANI, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2329-2333
[3]  
CUTLER PH, UNPUB IVMC 91, P12
[4]   ASPECTS OF FIELD-EMISSION FROM SILICON DIODE-ARRAYS [J].
HARVEY, RJ ;
LEE, RA ;
MILLER, AJ ;
WIGMORE, JK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2323-2328
[5]   DERIVATION OF THE IMAGE INTERACTION FOR NONPLANAR POINTED EMITTER GEOMETRIES - APPLICATION TO FIELD-EMISSION IV CHARACTERISTICS [J].
HE, J ;
CUTLER, PH ;
MISKOVSKY, NM ;
FEUCHTWANG, TE ;
SULLIVAN, TE ;
CHUNG, M .
SURFACE SCIENCE, 1991, 246 (1-3) :348-364
[6]  
HE J, 1991, APPL PHYS LETT, V59, P1
[7]  
HINRICHS CH, 1990, IEEE T ELECTRON DEV, V38, P2575
[8]   STRUCTURE AND ELECTRICAL CHARACTERISTICS OF SILICON FIELD-EMISSION MICROELECTRONIC DEVICES [J].
HUNT, CE ;
TRUJILLO, JT ;
ORVIS, WJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2309-2313
[9]  
Luke Y. L., 1969, SPECIAL FUNCTIONS TH
[10]   SIMULATION AND DESIGN OF FIELD EMITTERS [J].
MARCUS, RB ;
CHIN, KK ;
YUAN, Y ;
WANG, HJ ;
CARR, WN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (06) :1545-1550