MULTIPLE-CHARGED SECONDARY-ION EMISSION FROM SILICON AND SILICON-OXIDE BOMBARDED BY HEAVY-IONS AT ENERGIES OF 0.4-10-MEV

被引:14
作者
KYOH, S
TAKAKUWA, K
SAKURA, M
UMEZAWA, M
ITOH, A
IMANISHI, N
机构
[1] Department of Nuclear Engineering, Kyoto University, Sakyo-ku, Kyoto 606-01, Yoshida-Honmachi
来源
PHYSICAL REVIEW A | 1995年 / 51卷 / 01期
关键词
D O I
10.1103/PhysRevA.51.554
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Secondary-ion yields have been measured for Si and SiO2 targets bombarded by C, Si, Ge, and Ag projectiles over an energy range beween 0.4 and 10 MeV, where the atomic-collision process changes from a nuclear to an electronic one. Obtained yields of secondary Siq+ (q=1,2,3,4) ions for the C projectiles are generally decreasing functions of incident energy. On the other hand, the yields for Ag increase with increasing energy except for Si+. The possibility of multiple-charged recoil-ion production through the simultaneous process of ionization and recoil caused by the projectiles is discussed on the basis of an independent-electron model, which describes multiple ionization of atoms by energetic heavy-ion impact. © 1995 The American Physical Society.
引用
收藏
页码:554 / 560
页数:7
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