COMPARATIVE-STUDY OF DIELECTRIC FORMATION BY FURNACE AND RAPID ISOTHERMAL PROCESSING

被引：35

作者：

SINGH, R

RADPOUR, F

CHOU, P

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576076

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1456 / 1460

页数：5

共 21 条

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[9] LASSIG SE, 1987, MATER RES SOC S P, V92, P103
[10] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS
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