INVESTIGATION OF SILICON-OXYGEN INTERACTIONS USING AUGER ELECTRON SPECTROSCOPY

被引：100

作者：

JOYCE, BA

NEAVE, JH

机构：

来源：

SURFACE SCIENCE | 1971年 / 27卷 / 03期

关键词：

D O I：

10.1016/0039-6028(71)90184-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：499 / &

共 30 条

[11] AUGER ELECTRON SPECTROSCOPY OF SI [J].

GRANT, JT ;

HAAS, TW .

SURFACE SCIENCE, 1970, 23 (02) :347-&

[12] THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J].

GREEN, M ;

MAXWELL, KH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :145-150

[13] OXYGEN STICKING COEFFICIENTS ON CLEAN SEMICONDUCTOR SURFACES [J].

GREEN, M .

SURFACE SCIENCE, 1965, 3 (04) :419-&

[14]

Haas T. W., 1970, Applied Physics Letters, V16, P172, DOI 10.1063/1.1653149

[15] OXYGEN ADSORPTION ON SILICON AND GERMANIUM [J].

HAGSTRUM, HD .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1020-&

[16] INTERPRETATION OF LOW ENERGY ELECTRON DIFFRACTION DATA TO PREDICT SURFCE ATOM ARRANGEMENTS [J].

HANSEN, NR ;

HANEMAN, D .

SURFACE SCIENCE, 1964, 2 :566-574

[17]

JOYCE BR, TO BE PUBLISHED

[18] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&

[19] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1403-&

[20] A THEORETICAL INTERPRETATION OF LOW-ENERGY SATELLITE LINES IN X-RAY SPECTRA OF COMPOUNDS [J].

MENDEL, H ;

KOSTER, AS .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (04) :855-&

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