GROWTH OF ZNMGSSE AND FABRICATION OF BLUE LASER-DIODES

被引：2

作者：

AKIMOTO, K ^{[1
]}

OKUYAMA, H ^{[1
]}

MIYAJIMA, T ^{[1
]}

MORINAGA, Y ^{[1
]}

HIEI, F ^{[1
]}

OZAWA, M ^{[1
]}

机构：

[1] SONY CORP,RES CTR,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

PHYSICA B | 1993年 / 191卷 / 1-2期

关键词：

D O I：

10.1016/0921-4526(93)90186-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose ZnMgSSe as a new material for the cladding layer of a blue laser diode. The band-gap energy can be varied from 2.8 to near 4 eV, maintaining lattice-matching to a (100) GaAs substrate. Using the material, double heterostructure and multi-quantum-well lasers were fabricated and continuous wave operation was achieved for the first time at 77 K. Blue stimulated emission was observed at a wavelength of 447 nm and the threshold current density was 225 A/cm2 for the multi-quantum-well lasers.

引用

页码：133 / 135

页数：3

共 5 条

[1]

BROSER I, 1982, LANDOLTBORNSTEIN, V17, P10

[2] BLUE-GREEN LASER-DIODES [J].