ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON PREPARED BY RF SPUTTERING

被引：1

作者：

KIM, GI

PANYAKEOW, S

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S2.95

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：95 / 98

页数：4

共 8 条

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[4]

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[5] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

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[6] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

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[7] DOPED AMORPHOUS-SEMICONDUCTORS [J].

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[8]

SPEAR WE, 1976, PHOTOCONDUCTIVITY RE, P185

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