FAST PROXIMITY EFFECT CORRECTION - AN EXTENSION OF PYRAMID FOR CIRCUIT PATTERNS OF ARBITRARY SIZE

被引:20
作者
JACOB, JC [1 ]
LEE, SY [1 ]
MCMILLAN, JA [1 ]
MACDONALD, NC [1 ]
机构
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期
关键词
D O I
10.1116/1.585932
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Previously, we introduced PYRAMID, a hierarchical pattern shape modification scheme for proximity effect correction in electron-beam lithography, which enabled rapid correction of circuit patterns with linewidths down to 0.1 mum. However, it was limited to relatively small circuit patterns only. This article describes an extension of PYRAMID for circuit patterns of arbitrary size, as well as additional improvements to the previous implementation. PYRAMID is a fast hierarchical pattern modification scheme that can be conceptually partitioned into two phases: local correction to account for circuit components separated by small distances (approximately 1 mum) and global correction for circuit components separated by larger distances. PYRAMID supports input circuits composed of arbitrarily partitioned rectangles, as well as 135-degrees angle path inputs. Also, a segmented mode of operation allows a large circuit to be corrected one segment at a time, thereby reducing computer memory requirements. Experimental results showing the successful correction of a relatively large test pattern (with linewidths as small as 0.1 mum) in 200 nm PMMA resist are provided along with correction times as a function of the number of circuit components.
引用
收藏
页码:3077 / 3082
页数:6
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