GAS-PHASE KINETICS ANALYSIS AND IMPLICATIONS FOR SILICON-CARBIDE CHEMICAL VAPOR-DEPOSITION

被引：100

作者：

STINESPRING, CD

WORMHOUDT, JC

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(88)90096-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：481 / 493

页数：13

共 45 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI
ADDAMIANO, A
SPRAGUE, JA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527
[2] [Anonymous], 1985, COMMUNICATION
[3] [Anonymous], 2016, J PHYS CHEM REF DATA
[4] Benson S.W., 1968, THERMOCHEMICAL KINET
[5] PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS
BOWREY, M
PURNELL, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546): : 341 - &
[6] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION
BOZSO, F
YATES, JT
CHOYKE, WJ
MUEHLHOFF, L
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2771 - 2778
[7] Chase M.W., JANAF THERMOCHEMICAL, V3rd
[8] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR
COLTRIN, ME
KEE, RJ
MILLER, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) : 425 - 434
[9] THE STRUCTURE OF SI2C AND SI-3
DIERCKSEN, GHF
GRUNER, NE
ODDERSHEDE, J
SABIN, JR
[J]. CHEMICAL PHYSICS LETTERS, 1985, 117 (01) : 29 - 32
[10] THERMODYNAMIC STUDY OF SIC UTILIZING A MASS SPECTROMETER
DROWART, J
DEMARIA, G
INGHRAM, MG
[J]. JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) : 1015 - 1021