ANALYTICAL STUDY OF PUNCHTHROUGH IN BURIED CHANNEL P-MOSFETS

被引：11

作者：

SKOTNICKI, T ^{[1
]}

MERCKEL, G ^{[1
]}

PEDRON, T ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,GRENOBLE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：690 / 705

页数：16

共 9 条

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