SIMPLIFIED MODEL FOR SUBPINCHOFF CONDUCTION IN DEPLETION-MODE IGFETS

[1] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 38 - 67

[2] SUBTHRESHOLD DRAIN LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 213 - &

[3] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) : 55 - 60

[4] TROUTMAN RR, 1973, IEEE T CIRCUIT THEOR, V20, P559

[1] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 38 - 67

[2] SUBTHRESHOLD DRAIN LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 213 - &

[3] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) : 55 - 60

[4] TROUTMAN RR, 1973, IEEE T CIRCUIT THEOR, V20, P559