IR DIODE-LASER PROBING OF OMVPE KINETICS

被引:29
作者
GASKILL, DK
KOLUBAYEV, V
BOTTKA, N
SILLMON, RS
BUTLER, JE
机构
[1] US Naval Research Lab, United States
关键词
Chemical Reactions - Crystals--Epitaxial Growth - Infrared Radiation - Laser Beams - Organometallics;
D O I
10.1016/0022-0248(88)90517-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This work provides preliminary kinetic information for the reaction of CH3 with AsH3. This reaction has been studied between 304 and 440 K and its bimolecular reaction rate measured under pseudo first order conditions was found to be 6.5 (2.0)×10-14 cm3 molecule-1 s-1 at room temperature. An Arrhenius analysis based on measurements of the rate constant over a limited temperature range constant over a limited temperature range shows a low, 1.65 (50) kcal mol-1, activation energy, but the frequency factor is similar to other reactions of CH3 with hydrogen containing species. Also, the room temperature reaction of CH3 with itself or H2 was found to be unimportant compared to the reaction with AsH3.
引用
收藏
页码:127 / 133
页数:7
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