TEMPERATURE-DEPENDENCE OF THE RESISTIVITY OF AMORPHOUS INDIUM OXIDE

被引：19

作者：

BELLINGHAM, JR

GRAHAM, M

ADKINS, CJ

PHILLIPS, WA

机构：

[1] Cavendish Laboratory, Cambridge, CB3 OHE, Madingley Road

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80169-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

After a brief discussion of results on insulating amorphous indium oxide we concentrate on metallic samples, showing that the region of negative temperature coefficient of resistivity consistently observed at low temperature is due to weak localisation effects which are analysed in detail. We conclude with a brief discussion of the positive temperature coefficients of resistivity observed at higher temperatures.

引用

页码：519 / 522

页数：4

共 8 条

[1]

ALTSHULER BL, 1979, ZH EKSP TEOR FIZ, V50, P968

[2] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].