SPIN DEPENDENT RECOMBINATION AND PHOTOCONDUCTIVE RESONANCE IN SILICON

被引：14

作者：

MENDZ, G

HANEMAN, D

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 06期

关键词：

D O I：

10.1088/0022-3719/11/6/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L197 / L203

页数：7

共 25 条

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[9] NEUTRAL-IMPURITY SCATTERING EXPERIMENTS IN SILICON WITH HIGHLY SPIN-POLARIZED ELECTRONS [J].

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[10] RESISTIVITY DECREASE DUE TO ELECTRON-SPIN RESONANCE IN METALLIC REGION OF HEAVILY PHOSPHORUS DOPED SILICON [J].

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