RESISTIVITY DECREASE DUE TO ELECTRON-SPIN RESONANCE IN METALLIC REGION OF HEAVILY PHOSPHORUS DOPED SILICON

被引：11

作者：

MORIGAKI, K

KISHIMOTO, N

LEPINE, DJ

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,ROPPONGI 106,TOKYO,JAPAN

[2] ECOLE POLYTECH PALAISEAU,LAB PHYS MAT CONDENSEE,PLATEAU PALAISEAU,91120 PLAISEAU,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1098(75)90244-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1017 / 1019

页数：3

共 12 条

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[2]

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[3]

MAEKAWA S, 1965, SEMINAR IMPURITY CON

[4] SPIN-DEPENDENT CONDUCTIVITY OF PHOSPHORUS-DOPED SILICON IN INTERMEDIATE CONCENTRATION REGION [J].

MORIGAKI, K ;

ONDA, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) :1049-1057

[5]

MORIGAKI K, TO BE PUBLISHED

[6] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT [J].

QUIRT, JD ;

MARKO, JR .

PHYSICAL REVIEW B, 1973, 7 (08) :3842-3858

[7] NEGATIVE MAGNETORESISTANCE IN METALLIC IMPURITY CONDUCTION OF N-TYPE GERMANIUM [J].

SASAKI, W .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (05) :825-+

[8] HIGH-SENSITIVITY MAGNETIC RESONANCE BY BOLOMETER DETECTION [J].

SCHMIDT, J ;

SOLOMON, I .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3719-&

[9]

TOTH G, 1972, P INT C LOW TEMP PHY, P455

[10] THEORY OF LOCALIZED SPINS AND NEGATIVE MAGNETORESISTANCE IN METALLIC IMPURITY CONDUCTION [J].

TOYOZAWA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (06) :986-&

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