VARIATION OF RESISTIVITY WITH THICKNESS OF TIN OXIDE-FILMS GROWN BY SPRAY PYROLYSIS

被引：19

作者：

CHAUDHURI, UR

RAMKUMAR, K

SATYAM, M

机构：

[1] Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1990年 / 23卷 / 07期

关键词：

D O I：

10.1088/0022-3727/23/7/042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：994 / 995

页数：2

共 12 条

[1] PROPERTIES OF ELECTRON-BEAM-EVAPORATED TIN OXIDE-FILMS [J].

DAS, D ;

BANERJEE, R .

THIN SOLID FILMS, 1987, 147 (03) :321-331

[2]

HOLLAND L, 1958, VACUUM DEPOSITION TH, P492

[3]

JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133090, 10.1149/1.2132647]

[4]

JONSCHER AK, 1976, NATO ADV STUDY I S B, P2

[5]

MAYER H, 1959, P INT C STRUCTURE PR, P231

[6]

MURTY NS, 1982, THIN SOLID FILMS, V92, P347, DOI 10.1016/0040-6090(82)90159-6

[7] ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED AND ANTIMONY-DOPED TIN OXIDE-FILMS [J].

SHANTHI, E ;

DUTTA, V ;

BANERJEE, A ;

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6243-6251

[8] ANNEALING CHARACTERISTICS OF TIN OXIDE-FILMS PREPARED BY SPRAY PYROLYSIS [J].

SHANTHI, E ;

BANERJEE, A ;

DUTTA, V ;

CHOPRA, KL .

THIN SOLID FILMS, 1980, 71 (02) :237-244

[9] REACTIVE MAGNETRON DEPOSITION OF TRANSPARENT CONDUCTIVE FILMS [J].

SMITH, JF ;

ARONSON, AJ ;

CHEN, D ;

CLASS, WH .

THIN SOLID FILMS, 1980, 72 (03) :469-474

[10] ELECTRICAL CHARACTERISTICS OF SILICON-TIN OXIDE HETEROJUNCTIONS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

VARMA, S ;

RAO, KV ;

KAR, S .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2812-2822

← 1 2 →