ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110)

被引：3

作者：

DERENZI, V ^{[1
]}

BETTI, MG ^{[1
]}

MARIANI, C ^{[1
]}

机构：

[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY

来源：

SURFACE SCIENCE | 1993年 / 287卷 / pt A期

关键词：

D O I：

10.1016/0039-6028(93)90840-G

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface grown at room temperature is presented. Analysis of the Fuchs-Kliewer phonon and of the dopant-induced free carrier plasmon is performed through an appropriate fit to the data, by using a dielectric model calculation. A Fermi level pinning of 0.6 eV is determined at one monolayer coverage for this semiconducting interface, and at the present doping level (n-type, n almost-equal-to 2.7 x 10(18) cm-3). The low-energy electronic properties of a 700 angstrom thick Bi crystal grown on GaAs(110) are also studied, and electronic interband transitions at 47 and approximately 200 meV are singled out in semimetallic bismuth.

引用

页码：550 / 553

页数：4

共 28 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].