BI-INDUCED ELECTRONIC STATES AT THE INTERFACE WITH N-TYPE AND P-TYPE GAAS(110)

被引：5

作者：

COMPANO, R ^{[1
]}

DELPENNINO, U ^{[1
]}

MARIANI, C ^{[1
]}

BETTI, MG ^{[1
]}

PEDIO, M ^{[1
]}

机构：

[1] CNR, IST STRUTTURA MAT, I-00044 FRASCATI, ITALY

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90241-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic transitions of ordered Bi monolayers grown at room temperature on n- and p-type doped GaAs(110) were studied by high-resolution electron energy loss spectroscopy. The absorption edge of the semiconducting Bi monolayer was measured and a band gap of 0.65 eV is estimated. A new absorption feature is shown, particularly evident on p-doped GaAs, and its origin can be related to states generated by the dangling and broken bond acceptor-like states located at the regular dislocation arrays in the Bi overlayer.

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页码：242 / 246

页数：5

相关论文

共 24 条

[1] INELASTIC ELECTRON-SCATTERING INVESTIGATION OF THE SB GAAS(110) SYSTEM [J].

ANNOVI, G ;

BETTI, MG ;

DELPENNINO, U ;

MARIANI, C .

PHYSICAL REVIEW B, 1990, 41 (17) :11978-11991

[2] ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110) [J].

BERTONI, CM ;

CALANDRA, C ;

MANGHI, F ;

MOLINARI, E .

PHYSICAL REVIEW B, 1983, 27 (02) :1251-1258

[3] ANTIMONY-INDUCED ELECTRONIC STATES IN THE SB/INP(110) INTERFACE STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].

BETTI, MG ;

PEDIO, M ;

DELPENNINO, U ;

MARIANI, C .

PHYSICAL REVIEW B, 1991, 43 (17) :14317-14320

[4] ANTIMONY INDUCED STATES IN SB/INP(110) AND SB/GAAS(110) INTERFACES STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY [J].

BETTI, MG ;

PEDIO, M ;

DELPENNINO, U ;

MARIANI, C .

SURFACE SCIENCE, 1991, 251 :209-212

[5] LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110) [J].

CARELLI, J ;

KAHN, A .

SURFACE SCIENCE, 1982, 116 (02) :380-390

[6] AZIMUTHAL DEPENDENCE OF REFLECTION HIGH-RESOLUTION ELECTRON-ENERGY LOSS OF SI(111)(2X1) [J].

DELPENNINO, U ;

BETTI, MG ;

MARIANI, C ;

BERTONI, CM ;

NANNARONE, S ;

ABBATI, I ;

BRAICOVICH, L ;

RIZZI, A .

SOLID STATE COMMUNICATIONS, 1986, 60 (04) :337-341

[7] AZIMUTHAL DEPENDENCE OF THE ELECTRONIC EXCITATIONS IN GAAS(110) [J].

DELPENNINO, U ;

BETTI, MG ;

MARIANI, C ;

ABBATI, I .

SURFACE SCIENCE, 1988, 207 (01) :133-141

[8] INVESTIGATION OF THE PLASMON EXCITATION ON HEAVILY DOPED P-TYPE GAAS(110) SURFACE [J].

DELPENNINO, U ;

BIAGI, R ;

MARIANI, C .

APPLIED SURFACE SCIENCE, 1992, 56-8 :44-49

[9] UNOCCUPIED SURFACE-STATES OF (1X1) SB OVERLAYERS ON GAAS(110) AND INP(110) [J].

DRUBE, W ;

HIMPSEL, FJ .

PHYSICAL REVIEW B, 1988, 37 (02) :855-857

[10] BISMUTH ON GAAS(110) - CHARACTERIZATION OF GROWTH MODE AND SCHOTTKY-BARRIER FORMATION AT LOW AND ROOM-TEMPERATURE [J].

ESSER, N ;

HUNERMANN, M ;

RESCH, U ;

SPALTMANN, D ;

GEURTS, J ;

ZAHN, DRT ;

RICHTER, W ;

WILLIAMS, RH .

APPLIED SURFACE SCIENCE, 1989, 41-2 :169-173