TEMPERATURE-DEPENDENT TUNNELLING OF EXCITONS IN NITROGEN-DOPED GAP

被引：9

作者：

BELEZNAY, F

GAL, M

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 24期

关键词：

D O I：

10.1088/0022-3719/10/24/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L691 / L693

页数：3

共 7 条

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[4] TEMPERATURE MODULATED PHOTOLUMINESCENCE OF NITROGEN DOPED GAP [J].

GAL, M .

[5]

LYON SA, 1977, SOLID ST COMMUN, V23, P445

[6] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

THOMAS, DG ;

HOPFIELD, JJ .

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[7]

WIESNER PJ, 1975, PHYS REV LETT, V35, P1366, DOI 10.1103/PhysRevLett.35.1366