共 31 条
[4]
ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
[J].
PHYSICAL REVIEW B,
1983, 27 (08)
:4770-4778
[7]
PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE
[J].
PHYSICAL REVIEW,
1965, 137 (1A)
:A245-&
[8]
MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (02)
:320-327
[10]
ELEMENTARY THEORY OF HETEROJUNCTIONS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977, 14 (04)
:1016-1021