THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .2. AVALANCHE MODE

被引：27

作者：

HABIB, SED ^{[1
]}

SIMMONS, JG ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1016/0038-1101(80)90088-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：497 / 505

页数：9

共 16 条

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[5] GRAPHICAL ANALYSIS OF I-V CHARACTERISTICS OF GENERALIZED P-N-P-N DEVICES
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1366 - &
[6] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY
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KING, FD
SHEWCHUN, J
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 551 - 561
[7] THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE
HABIB, SED
SIMMONS, JG
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 181 - 192
[8] HABIB SED, UNPUBLISHED
[9] HABIB SED, 1978, THESIS U TORONTO
[10] KROGER H, 1978, SOLID STATE ELECTRON, V21, P643, DOI 10.1016/0038-1101(78)90331-3